Radiation Tolerant Electronics

English | PDF | 2019 | 212 Pages | ISBN : N/A | 24.93 MB


English | PDF | 2019 | 212 Pages | ISBN : N/A | 24.93 MB
Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications including nuclear energy and safety management.
With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade. Even though total ionizing dose effects in bulk CMOS are well known, little is still known on the radiation performance of advanced (FD-)SOI and FinFET technologies. Regarding single-event effects, the continued scaling has drastically increased the number of multiple-transistor or multiple-cell upsets, which requires not only new solutions to reduce the error rate in digital and mixed-signal ASICs, but also for FPGAs. The radiation hardness assurance of complex systems with multiple components in mixed technologies also necessitates new testing paradigms and verification methodologies to limit the time and cost for evaluation.

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